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| MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. * High Gain - 50 Min @ IC = 2.0 A * Low Saturation Voltage - 0.5 V @ IC = 2.0 A * High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @ IC = 250 mAdc * Epoxy Meets UL 94 V-0 @ 0.125 in * ESD Ratings: Human Body Model, 3B; >8000 V Machine Model, C; >400 V http://onsemi.com 4.0 Amps 45 Volts 20 Watts POWER TRANSISTOR MARKING DIAGRAM 4 12 3 DPAK CASE 369C STYLE 1 YWW J148 IIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II I II II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB Value 45 45 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 4.0 7.0 50 Collector Current - Continuous Peak Base Current mAdc W W/C W W/C C Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD 20 0.16 1.75 0.014 TJ, Tstg -55 to + 150 J148 Y WW = Device Code = Year = Work Week ORDERING INFORMATION Device MJD148T4 Package DPAK Shipping 2500/Tape & Reel THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA Max Unit Thermal Resistance, Junction-to-Case 6.25 71.4 C/W C/W For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Thermal Resistance, Junction-to-Ambient (Note 1) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. (c) Semiconductor Components Industries, LLC, 2004 1 June, 2004 - Rev. 2 Publication Order Number: MJD148/D IIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Current-Gain-Bandwidth Product Base-Emitter On Voltage (Note 2) Collector-Emitter Saturation Voltage (Note 2) DC Current Gain (Note 2) Emitter Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage (Note 2) Characteristic IC = 10 mAdc, VCE = 5 Vdc IC = 0.5 Adc, VCE = 1 Vdc IC = 2 Adc, VCE = 1 Vdc IC = 3 Adc, VCE = 1 Vdc IC = 250 mAdc, VCE = 1 Vdc, f = 1 MHz IC = 2 Adc, VCE = 1 Vdc IC = 2 Adc, IB = 0.2 Adc VBE = 5 Vdc, IC = 0 VCB = 45 Vdc, IE = 0 IC = 100 mAdc, IB = 0 http://onsemi.com Test Conditions MJD148 2 VCEO(sus) Symbol VCE(sat) VBE(on) ICBO IEBO hFE fT Min 40 85 50 30 45 3 - - - - Max - 375 - - 1.1 0.5 20 - 1 - mAdc mAdc MHz Unit Vdc Vdc Vdc - MJD148 TYPICAL CHARACTERISTICS hFE, DC CURRENT GAIN (NORMALIZED) 10 TJ = 150C 5 3 2 1 = 25C 0.5 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (A) 0.5 1 2 3 4 -55C VCE = 2 V VCE = 10 V Figure 1. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (V) 2 TJ = 25C 1.6 1.2 IC = 10 mA 100 mA 1A 3A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region http://onsemi.com 3 MJD148 2 qy, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C 1.6 VOLTAGE (V) + 2.5 +2 + 1.5 +1 + 0.5 0 -0.5 -1 -1.5 -2 -2.5 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1 IC, COLLECTOR CURRENT (A) 2 34 qV for VBE *qV for VCE(sat) *APPLIES FOR IC/IB hFE/2 *TJ = - 65C to + 150C 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1 IC, COLLECTOR CURRENT (A) 2 34 Figure 3. "On" Voltages Figure 4. Temperature Coefficients 103 VCE = 30 V IC, COLLECTOR CURRENT (mA) 102 101 100 10-1 10-2 TJ = 150C 100C REVERSE FORWARD 25C ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 10-3 -0.4 -0.3 -0.2 -0.1 VBE, BASE-EMITTER VOLTAGE (V) Figure 5. Collector Cut-Off Region r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.03 0.02 0.05 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 100 200 500 1k Figure 6. Thermal Response http://onsemi.com 4 MJD148 10 IC, COLLECTOR CURRENT (A) 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 1 500 ms dc 5 ms 1 ms FORWARD BIAS SAFE OPERATING AREA INFORMATION BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25C SINGLE PULSE, D 0.1% TJ = 150C 20 30 50 70 2 3 5 7 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 7. Maximum Rated Forward Bias http://onsemi.com 5 MJD148 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJD148/D |
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